Electrical Properties of Low-Dielectric-Constant SiOC(–H) Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Methyltriethoxysilane and O2-Reference-Cited by-同舟云学术

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Electrical Properties of Low-Dielectric-Constant SiOC(–H) Films Prepared by Plasma-Enhanced Chemical Vapor Deposition from Methyltriethoxysilane and O2

Published:2006-10-24 Issue:10B Volume:45 Page:8435-8439
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Navamathavan Rangaswamy,Oh Kyoung Suk,Chang Sil Yang,Kim Seung Hyun,Jang Yong Jun,Jung An Su,Lee Heon Ju,Lee Kwang Man,Choi Chi Kyu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of carbon incorporation on the refractive index of PECVD silicon oxide layers;AIP Advances;2020-04-01

2. Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors;Sensors and Actuators B: Chemical;2018-10

3. SiOCH thin films deposited by chemical vapor deposition: From low-κ to chemical and biochemical sensors;Microelectronic Engineering;2017-01

4. Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems;Journal of Applied Physics;2013-08-21

5. Ultra-Low-k by CVD: Deposition and Curing;Advanced Interconnects for ULSI Technology;2012-02-17

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