Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

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Thinning Technology for Lithium Niobate Wafer by Surface Activated Bonding and Chemical Mechanical Polishing

Published:2006-04-25 Issue:4B Volume:45 Page:3822-3827
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wu Chia-Cheng,Horng Ray-Hua,Wuu Dong-Sing,Chen Tsai-Ning,Ho Shih-Shian,Ting Chia-Jen,Tsai Hung-Yin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proton exchange-enhanced surface activated bonding for facile fabrication of monolithic lithium niobate microfluidic chips;Chemical Engineering Journal;2024-09

2. Enhancing the electric charge output in LiNbO₃-based piezoelectric pressure sensors;RSC Advances;2024

3. Fabrication of heterogeneous LNOI photonics wafers through room temperature wafer bonding using activated Si atomic layer of LiNbO3, glass, and sapphire;Applied Surface Science;2023-05

4. Investigation of the interface between LiNbO₃ and Si fabricated via room-temperature bonding method using activated Si nano layer;Japanese Journal of Applied Physics;2023-03-31

5. Modelling and optimization of surface roughness in chemical mechanical polishing based on DNN-GA;Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science;2023-01-07

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