New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super-Chip Integration

Author:

Fukushima Takafumi,Yamada Yusuke,Kikuchi Hirokazu,Koyanagi Mitsumasa

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 41 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The Patterned Photosensitive Dielectric Organic Material/Cu Simultaneous Novel CMP Process for Fine Damascene RDL Based on Process Design Assisted by Deep Learning;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

2. Non-TCB Process Cu/SiO2 Hybrid Bonding Using Plasma-free Hydrophilicity Enhancement with NaOH for Chip-to-wafer Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

3. Design and Fabrication of a Wafer-level Interposer for System-on-Wafer Packaging Application;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

4. Impact of Super-long-throw PVD on TSV Metallization and Die-to-Wafer 3D Integration Based on Via-last;2023 IEEE International 3D Systems Integration Conference (3DIC);2023-05-10

5. Physical Properties of Large Cu Grain and Application to Cu-SiO2 Hybrid Bonding;2023 International Conference on Electronics Packaging (ICEP);2023-04-19

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