Highly Reliable Ring-Type Contact for High-Density Phase Change Memory-Reference-Cited by-同舟云学术

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Highly Reliable Ring-Type Contact for High-Density Phase Change Memory

Published:2006-04-25 Issue:4B Volume:45 Page:3233-3237
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jeong Chang-Wook,Ahn Su-Jin,Hwang Young-Nam,Song Yoon-Jong,Oh Jae-Hee,Lee Su-Youn,Lee Se-Ho,Ryoo Kyung-Chang,Park Jong-Hyun,Park Jae-Hyun,Shin Jae-Min,Yeung Fai,Jeong Won-Cheol,Kim Jeong-In,Koh Gwan-Hyeob,Jeong Gi-Tae,Jeong Hong-Sik,Kim Kinam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. WN coating of TiN electrode to improve the reliability of phase change memory;Materials Science in Semiconductor Processing;2022-02

3. Investigation of the effect of blade electrode width on performance of phase change memory;Semiconductor Science and Technology;2021-08-31

4. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01

5. First-principles study of the liquid and amorphous phases of Sb2Te phase change memory material;Journal of Physics: Condensed Matter;2021-04-20

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