Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications-Reference-Cited by-同舟云学术

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Highly Thermal Immune Nitrogen-Doped Ni–Germanosilicide with Co/TiN Double Layer for Nano-Scale Complementary Metal Oxide Semiconductor Applications

Published:2006-04-25 Issue:4B Volume:45 Page:2980-2983
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oh Soon-Young,Yun Jang-Gn,Kim Yong-Jin,Lee Won-Jae,Ji Hee-Hwan,Tuya Agchbayar,Kim Do-Woo,Cha Han-Seob,Cho Yoo-Jeong,Han Kil-Jin,Kim Yeong-Cheul,Wang Jin-Suk,Lee Hi-Deok

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide;Japanese Journal of Applied Physics;2010-05-20

2. Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device;Japanese Journal of Applied Physics;2008-10-17

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