Etching of High-kDielectric HfO2Films in BCl3-Containing Plasmas Enhanced with O2Addition-Reference-Cited by-同舟云学术

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Etching of High-kDielectric HfO2Films in BCl3-Containing Plasmas Enhanced with O2Addition

Published:2006-03-03 Issue:No. 10 Volume:45 Page:L297-L300
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kitagawa Tomohiro,Nakamura Keisuke,Osari Kazushi,Takahashi Kazuo,Ono Kouichi,Oosawa Masanori,Hasaka Satoshi,Inoue Minoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of etching performance of single etching gases for high-κ films;Microelectronic Engineering;2023-10

2. Mechanism of highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries;Journal of Vacuum Science & Technology A;2020-03

3. Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension;Russian Microelectronics;2018-09

4. Highly selective SiO2etching over Si3N4using a cyclic process with BCl3and fluorocarbon gas chemistries;Japanese Journal of Applied Physics;2018-04-25

5. Conclusions;Nano-Cmos Gate Dielectric Engineering;2017-12-19

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