New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Published:2012-12-04 Issue:12 Volume:5 Page:125503
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Shin In-Su,Wang Ke,Araki Tsutomu,Yoon Euijoon,Nanishi Yasushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=12/a=125503/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells;Materials & Design;2020-05

2. A route to low temperature growth of single crystal GaN on sapphire;Journal of Materials Chemistry C;2015

3. Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping;physica status solidi (b);2014-12-09

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