A route to low temperature growth of single crystal GaN on sapphire-Reference-Cited by-同舟云学术

A route to low temperature growth of single crystal GaN on sapphire

Published:2015 Issue:28 Volume:3 Page:7428-7436
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Motamedi Pouyan¹²³⁴,Dalili Neda⁵³⁴,Cadien Kenneth¹²³⁴

Affiliation:

1. Department of Chemical and Materials Engineering

2. University of Alberta

3. Edmonton

4. Canada

5. National Institute for Nanotechnology

Abstract

Gallium nitride (GaN) was deposited on sapphire at 275 °C, using plasma-enhanced atomic layer deposition. The films are single-crystal for the first ∼5 nm, before they transition to a polycrystalline structure. These structural shifts are reflected in the variations of the refractive index.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01556A

Reference77 articles.

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2. III–Nitride UV Devices

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5. High speed growth of device quality GaN and InGaN by RF-MBE

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