Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si-Reference-Cited by-同舟云学术

Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al$_{2}$O$_{3}$/AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistor on Si

Published:2011-09-20 Issue:10 Volume:4 Page:104102
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Zhou Hong,Ng Geok Ing,Liu Zhi Hong,Arulkumaran Subramaniam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=10/a=104102/pdf

Reference13 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. High-power AlGaN/GaN HEMTs for Ka-band applications

3. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors

4. The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

5. High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulator Grown by ALD

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