Fabrication of GaNAs/AlGaAs Heterostructures with Large Band Offset Using Periodic Growth Interruption-Reference-Cited by-同舟云学术

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Fabrication of GaNAs/AlGaAs Heterostructures with Large Band Offset Using Periodic Growth Interruption

Published:2011-11-18 Issue:12 Volume:4 Page:125001
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Mano Takaaki,Jo Masafumi,Mitsuishi Kazutaka,Elborg Martin,Sugimoto Yoshimasa,Noda Takeshi,Sakuma Yoshiki,Sakoda Kazuaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/4/i=12/a=125001/pdf

Reference20 articles.

1. Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasers

2. Temperature dependence of the threshold current for InGaAlP visible laser diodes

3. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED;Ultramicroscopy;2021-12

2. Capacitance spectroscopy on n -type GaNAs/GaAs embedded quantum structure solar cells;Physica B: Condensed Matter;2018-04

3. Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells;Applied Physics Letters;2017-05-15

4. Open-Circuit Voltage in AlGaAs Solar Cells With Embedded GaNAs Quantum Wells of Varying Confinement Depth;IEEE Journal of Photovoltaics;2017-01

5. Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs;AIP Advances;2016-06

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