The Impact and Optimization of EUV Sensitive Si Hardmask for Sub-20nm Patterning in EUVL with NTD Process-Reference-Cited by-同舟云学术

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The Impact and Optimization of EUV Sensitive Si Hardmask for Sub-20nm Patterning in EUVL with NTD Process

Published:2013 Issue:5 Volume:26 Page:679-683
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Shigaki Shuhei,Onishi Ryuji,Yaguchi Hiroaki,Shibayama Wataru,Fujitani Noriaki,Sakamoto Rikimaru

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

https://www.jstage.jst.go.jp/article/photopolymer/26/5/26_679/_pdf

Reference5 articles.

1. 1. Young C. Bae Seung-Hyun Lee, Rosemary Bell, Jong Keun Park, Thomas Cardolaccia, Yi Liu, Jibin Sun, Cecily Andes, Young Seok Kim and George G. Barclay, J. Photopolym. Sci.Tecnol., 24 (2) 211.

2. 2. Tarutani et al., Negative tone imaging in EUV, Extreme Ultraviolet Lithography Symposium, Brussels, 2012.

3. 3. H. Hijikata, T. Kozawa et al., EUV Symposium, 2009.

4. 4. A. Nakano, T. Kozawa et al., Jpn. J. Appl. Phys., 45 (2006) 6866.

5. 5. R. Hirose, T. Kozawa et al., Appl. Phys. Exp., 1 (2008) 027004.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New silicon hard mask material development for sub-5nm node;Advances in Patterning Materials and Processes XXXVI;2019-03-26

2. Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist;SPIE Proceedings;2014-03-27

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