Enhancement of Photoresist Removal Rate by Using Atomic Hydrogen Generated under Low-pressure Conditions

Author:

Yamamoto Masashi1,Umemoto Hironobu2,Ohdaira Keisuke3,Nagaoka Shiro4,Shikama Tomokazu1,Nishiyama Takashi5,Horibe Hideo5

Affiliation:

1. Department of Electrical and Computer Engineering, National Institute of Technology, Kagawa College

2. Applied Chemistry and Biochemical Engineering Course, Graduate School of Integrated Science and Technology, Shizuoka University

3. Green Devices Research Center, Japan Advanced Institute of Science and Technology

4. Department of Electronic Systems Engineering, National Institute of Technology, Kagawa College

5. Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka City University

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Reference26 articles.

1. 1. T. W. Hickmott, J. Chem. Phys., 32 (1960) 810.

2. 2. J. N. Smith, Jr., W. L. Fite, J. Chem. Phys., 37 (1962) 898.

3. 3. H. Umemoto, Chem. Vapor Deposition, 16 (2010) 275.

4. 4. J. I. Pankove, N. M. Johnson, in Hydrogen in Semiconductors, Ed. R. K. Willardson and A. C. Beer (Academic Press, San Diego, CA, 1991) Semiconductors and Semimetals, Vol. 34, p. 110.

5. 5. R. Z. Bachrach, R. D. Bringans, J. Vac. Sci. Technol. B, 1 (1983) 142.

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