Novel High Sensitivity EUV Photoresist for Sub-7 nm Node

Author:

Nagai Tomoki1,Nakagawa Hisashi1,Naruoka Takehiko1,Dei Satoshi2,Tagawa Seiichi3,Oshima Akihiro3,Nagahara Seiji4,Shiraishi Gosuke5,Yoshihara Kosuke5,Terashita Yuichi5,Minekawa Yukie5,Buitrago Elizabeth6,Ekinci Yasin6,Yildirim Oktay7,Meeuwissen Marieke7,Hoefnagels Rik7,Rispens Gijsbert7,Verspaget Coen7,Maas Raymond7

Affiliation:

1. JSR Corporation

2. JSR Micro N.V.

3. Osaka University

4. Tokyo Electron Ltd.

5. Tokyo Electron Kyushu Ltd.

6. Paul Scherrer Institute

7. ASML Netherlands B.V.

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Reference11 articles.

1. 1. U.S. Patent 2569347, 2502488.

2. 2. U.S. Patent 3138743.

3. 3. J. M. J. Frechet, H. Ito, C. G. Willson, Proceedings Microcircuit Engineering, 82 (1982) 260.

4. 4. C. G. Willson, H. Ito, J. M. J. Frechet, Microcircuit Engineering, 82 (1982) 261.

5. 5. C. G. Willson, H. Ito, J. M. J. Frechet, F. Houlihan, International Union of Pure and Applied Chemistry 28 (1982) 448.

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