Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications-Reference-Cited by-同舟云学术

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Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Published:2011 Issue:2 Volume:14 Page:H69
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Rainey Paul,Wasyluk Joanna,Perova Tatiana,Hurley Richard,Mitchell Neil,McNeill David,Gamble Harold,Armstrong Mervyn

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference26 articles.

1. Silicon on insulator material technology

2. Single crystal Si layers on glass formed by ion cutting

3. Effects of hydrogen implantation temperature on ion-cut of silicon

4. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

5. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-loss Ge waveguide at the 2-µm band on an n-type Ge-on-insulator wafer;Optical Materials Express;2021-11-30

2. Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process;AIP Advances;2020-01-01

3. Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding;Materials Science in Semiconductor Processing;2016-02

4. Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples;Journal of Raman Spectroscopy;2011-10-27

5. Investigation of Germanium Implanted with Hydrogen for Layer Transfer Applications;Solid State Phenomena;2011-08

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