Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples-Reference-Cited by-同舟云学术

Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

Published:2011-10-27 Issue:3 Volume:43 Page:448-454
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Wasyluk J.¹,Rainey P. V.²,Perova T. S.¹,Mitchell S. J. N.²,McNeill D. W.²,Gamble H. S.²,Armstrong B. M.²,Hurley R.²

Affiliation:

1. Department of Electronic and Electrical Engineering, Trinity College; University of Dublin; Dublin 2 Ireland

2. School of Electrical Engineering and Computer Science, Northern Ireland Semiconductor Research Centre; The Queen's University of Belfast; Stranmillis Road Belfast BT9 5AH Northern Ireland UK

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jrs.3052/fullpdf

Reference24 articles.

1. Silicon on insulator material technology

2. Extended-type defects created by high temperature helium implantation into silicon

3. Study of extended-defect formation in Ge and Si after H ion implantation

4. Extended Defects Created by Light Ion Implantation in Ge

5. Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ge-on-insulator fabrication based on Ge-on-nothing technology;Japanese Journal of Applied Physics;2024-04-01

2. Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method;ECS Journal of Solid State Science and Technology;2024-04-01

3. Investigation of structural transformation and residual stress under single femtosecond laser pulse irradiation of 4H–SiC;Ceramics International;2022-09

4. Ge field-effect transistor with asymmetric metal source/drain fabricated on Ge-on-Insulator: Schottky tunneling source mode operation and conventional mode operation;Japanese Journal of Applied Physics;2019-03-26

5. Investigation on the laser ablation of SiC ceramics using micro‐Raman mapping technique;Journal of Advanced Ceramics;2016-08-21