Reactive Ion Etching of SOI (SIMOX and ZMR) Silicon in Nitrogen Containing CF 4 + O 2 and SF 6 + O 2 Plasmas-Reference-Cited by-同舟云学术

Reactive Ion Etching of SOI (SIMOX and ZMR) Silicon in Nitrogen Containing CF 4 + O 2 and SF 6 + O 2 Plasmas

Published:1993-09-01 Issue:9 Volume:140 Page:2659-2668
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Purbo O. W.¹²³,Selvakumar C. R.¹²³,Misra D.¹²³

Affiliation:

1. Inter University Center on Microelectronics, Institute of Technology Bandung, Bandung 40135, Indonesia

2. Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1

3. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2220882/pdf

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