Abstract
In silicon-based electronic and optoelectronic devices hydrogen plays a significant role in passivating silicon dangling bonds. This improves the device performance and reliability of the devices by producing a high quality Si-SiO2 interface. This work reviews the early use of hydrogen in standard silicon MOS devices with SiO2 as gate dielectric to recent devices with high-k gate stacks. Role of hydrogen’s isotope deuterium is outlined. In addition, the impact of hydrogen in high-k gate dielectrics on silicon and germanium substrates is also discussed. Contribution of hydrogen/deuterium in photodiode performance is also briefly described.
Publisher
The Electrochemical Society
Cited by
1 articles.
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