On the Mechanism of Silicon Nitride Chemical Vapor Deposition from Dichlorosilane and Ammonia-Reference-Cited by-同舟云学术

On the Mechanism of Silicon Nitride Chemical Vapor Deposition from Dichlorosilane and Ammonia

Published:1999-11-01 Issue:11 Volume:146 Page:4203-4212
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Korkin Anatoli A.¹,Cole J. Vernon¹,Sengupta Debasis²,Adams James B.²

Affiliation:

1. Motorola, Incorporated, Computational Technologies Laboratory, Semiconductor Products Sector, Mesa, Arizona 85202, United States of America

2. The Department of Chemical, Biological, and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1392615/pdf

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