A New Design of Anodic Oxidation Reactor for High‐Quality Gate Oxide Preparation
Author:
Affiliation:
1. Department of Electronic Engineering, City Polytechnic of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
2. Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/1.2085493/pdf
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