ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles

Author:

Li Shoutian,Gaudet Greg,Nair Jayakrishnan

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Steigerwald J. Murarka S. Gutmann R. , CMP of Microelectronic Materials, Wiley, New York (1996), P. 129–304.

2. Chow M. F. Guthrie W. L. Kaufman F. B. , US Patent 4,702,792 (1987).

3. Investigation of pad deformation and conditioning during the CMP of silicon dioxide films

4. Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process

5. A theory of pad conditioning for chemical-mechanical polishing

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