Development of Integrated Electronics on Silicon-on-Glass (SiOG) Substrate

Abstract

Development of integrated electronics on the silicon-on-glass (SiOG) substrate is presented. The SiOG material technology, under development by Corning Incorporated, consists of anodic bonding and an implant-induced separation to transfer a single crystalline silicon film onto a glass substrate. The silicon-glass interface region is characterized by an ultra-strong and thermally stable bond, and includes an in situ barrier layer that is free of mobile ions. Key aspects of the low temperature (< 600 {degree sign}C) CMOS device fabrication process are described, with an emphasis on the design tradeoffs involved to maintain process simplicity (i.e. 6-level mask count, and no VT adjustment). The discussion also provides specific details of the device structure and operation, including mechanisms that compromise device performance identified through electrical simulation.