Single-crystal silicon films on glass

Abstract

We present a new process based on the electrolysis of glass, which allows the transfer of a single-crystal silicon film while creating an in situ barrier layer free of mobile ions in the glass. This barrier layer consists only of network-forming elements (i.e., aluminum, silicon, and boron) and is free of modifiers. The barrier layer glass is unusual and cannot be synthesized via any of the known glass-forming processes. The barrier layer is thermally stable and thus allows the fabrication of displays with ultimate performance. The process consists of the hydrogen ion implantation of silicon to create a defect structure followed by bringing the glass and the silicon wafer in contact, and finally applying electrical potential to cause the electrolysis of glass.