Characteristics of p‐Doped Polysilicon with B 2 H 6 Used as In Situ Dopant Source-Reference-Cited by-同舟云学术

Characteristics of p‐Doped Polysilicon with B 2 H 6 Used as In Situ Dopant Source

Published:1976-06-01 Issue:6 Volume:123 Page:913-916
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Chappelow R. E.¹²,Lin P. T.¹²

Affiliation:

1. IBM System Products Division, Essex Junction, Vermont 05452

2. IBM System Products Division, East Fishkill Facility, Hopewell Junction, New York 12533

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2132966/pdf

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