Detailed Analysis of Si-SiO2 Interface Traps in State-of-the-Art MOSFETs Using Charge Pumping

Abstract

Based on charge pumping (CP) mechanisms, the way Si-SiO2 interface traps interact with the gate CP signal in state-of-the-art MOSFETs with a thick SiO2 gate dielectric is detailed. The consequences that can be deduced or studied from the previous results are presented. This includes the way the interface is probed, the slope of the CP curves and the resulting interface trap density extraction from them. The dependence of CP curves with gate signal frequency and the high frequency limit case are dealt with using simulation. Both are very well accounted for, providing new information on Si-SiO2 interface trap characteristics.