Semiconductor Raman Laser with Pump Light Wavelength in the 800 nm Region-Reference-Cited by-同舟云学术

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Semiconductor Raman Laser with Pump Light Wavelength in the 800 nm Region

Published:1993-06-01 Issue:6 Volume:140 Page:1805-1808
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Suto K.¹²³,Kimura T.¹²³,Nishizawa J.¹²³

Affiliation:

1. Department of Materials Science, Faculty of Engineering, Tohoku University, Aoba Aramaki, Aoba‐ku, Sendai 980, Japan

2. Semiconductor Research Institute, Kawauchi, Aoba‐ku, Sendai 980, Japan

3. Tohoku University, 2‐1‐1 Katahira, Aoba‐ku, Sendai 980, Japan, and Semiconductor Research Institute, Kawauchi, Aoba‐ku, Sendai 980, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2221646/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Free exciton recombination in GaP and layers grown by temperature difference method under controlled vapor pressure;Journal of Crystal Growth;1996-03

2. Fabrication and characteristics of tapered waveguide semiconductor Raman lasers;IEE Proceedings - Optoelectronics;1996

3. Tapered waveguide semiconductor raman laser;International Journal of Infrared and Millimeter Waves;1995-04

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