Annealing Behavior of Reactive Ion Etching Induced Deep Levels-Reference-Cited by-同舟云学术

Annealing Behavior of Reactive Ion Etching Induced Deep Levels

Published:1990-05-01 Issue:5 Volume:137 Page:1559-1563
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Misra D.¹²,Heasell E. L.¹²

Affiliation:

1. Microelectronics Center, Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102

2. Department of Electrical Engineering, University of Waterloo, Waterloo, Ontario, Canada, N2L 3G1

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2086727/pdf

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