Structural and Reliability Analysis of Ohmic Contacts to SiC with a Stable Protective Coating for Harsh Environment Applications
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference27 articles.
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2. Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications
3. Cheung R. , Silicon Carbide Micro Electromechanical Systems for Harsh Environments, London: Imperial College Press (2006) 128–168.
4. Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications
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1. The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC;Solid State Phenomena;2024-08-22
2. SmartSiC™ Substrates: A Boon to Drain Metallization Process;Materials Science Forum;2024-08-21
3. High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications;Japanese Journal of Applied Physics;2020-11-25
4. High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications;Thin Solid Films;2019-01
5. Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC;Nature Materials;2017-05-01
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