Low-Temperature Growth of Thermal Quality SiO[sub 2] Thin Films in High-Density He/O[sub 2] Plasma Generated by RF Driven ICP Source-Reference-Cited by-同舟云学术

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Low-Temperature Growth of Thermal Quality SiO[sub 2] Thin Films in High-Density He/O[sub 2] Plasma Generated by RF Driven ICP Source

Published:2004 Issue:4 Volume:7 Page:G62
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Joshi P. C.,Ono Y.,Voutsas A. T.,Hartzell J. W.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference12 articles.

1. Growth of Thin SiO2 bY “SPIKE” Rapid Thermal Oxidation

2. Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

3. Low-Temperature Si Oxidation Using Inductively Coupled Oxygen-Argon Mixed Plasma

4. Low-Temperature and Low-Activation-Energy Process for the Gate Oxidation of Si Substrates

5. Ultrathin oxide film formation using radical oxygen in a UHV system

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2. Optimum condition to fabricate 5–10 nm SiO2/Si structure using advanced nitric acid oxidation of Si method with Si source;Journal of Applied Physics;2012-12-15

3. Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method;Applied Surface Science;2010-07

4. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures;Applied Surface Science;2010-07

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