Post Ion-Implant Photoresist Removal via Wet Chemical Cleans Combined with Physical Force Pretreatments-Reference-Cited by-同舟云学术

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Post Ion-Implant Photoresist Removal via Wet Chemical Cleans Combined with Physical Force Pretreatments

Published:2019-12-19 Issue:2 Volume:11 Page:219-226
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Totir George G.,Frank Martin,Vos Rita,Arnauts Sophia,Bearda Twan,Kenis Karine,Delande Martine,Le QuocToan,Kesters Els,Vereecke Guy,Mannaert Geert,Lux Marcel,Hoflijk Ilse,Conard Thierry,Banerjee Souvik,Malhouitre Stephane,Leunissen Leonardus H.A.,Mertens P.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2779382/pdf

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impacts of interface contaminations on the MoS2 field effect transistors and a modified fabrication process to pursue a better interface quality;Nanotechnology;2019-06-17

2. Chemical compatibility of fused filament fabrication-based 3-D printed components with solutions commonly used in semiconductor wet processing;Additive Manufacturing;2018-10

3. Removal of EUV exposed hydrocarbon from Ru capping layer of EUV mask using the mixture of alkaline solutions and organic solvents;Colloids and Surfaces A: Physicochemical and Engineering Aspects;2018-10

4. The effects of supercritical CO2 formulations on the removal of high-dose ion-implanted photoresists;Microelectronic Engineering;2013-08

5. The Stripping Behavior of High-Dose Ion-Implanted Photoresists in Supercritical CO2Formulations;ECS Journal of Solid State Science and Technology;2013

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