Improved Characteristics of GaSb MOS Capacitors by Ozone Post Deposition Treatment

Abstract

In this paper, we present the effects of Ozone post deposition treatment on Al2O3/GaSb MOS capacitors. It is found that after deposition of Al2O3 dielectrics by atomic layer deposition (ALD), in-situ Ozone post deposition treatment for five minutes can improve the interfacial and electrical properties of the Al2O3/GaSb MOS capacitors, reducing the interface state density (Dit) and gate leakage current. Dit near the mid-gap is reduced by ~10% after in-situ Ozone post deposition treatment. Explanations for the improved characteristics by in-situ Ozone post deposition treatment are proposed. It is believed that the effects of in-situ Ozone post deposition treatment is due to the reduction of oxygen vacancies and defects at the interface and in the dielectrics.