Effect of Ion Energy on the Diffusion of Si Implanted into GaAs-Reference-Cited by-同舟云学术

Effect of Ion Energy on the Diffusion of Si Implanted into GaAs

Published:1994-08-01 Issue:8 Volume:141 Page:2245-2249
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lee Cynthia C.¹,Deal Michael D.²,Jones Kevin S.³,Robinson Heyward G.³,Bravman John C.¹²³

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305‐2205

2. Department of Electrical Engineering, Stanford University, Stanford, California 94305‐4070

3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2055097/pdf

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