200 mm Silicon On Porous Layer Substrates Made by the Smart Cut Technology for Double Layer-Transfer Applications-Reference-Cited by-同舟云学术

200 mm Silicon On Porous Layer Substrates Made by the Smart Cut Technology for Double Layer-Transfer Applications

Published:2011 Issue:5 Volume:158 Page:H595
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Stragier A.-S.,Signamarcheix T.,Salvetat T.,Nolot E.,Dechamp J.,Mercier D.,Gergaud P.,Tauzin A.,Clavelier L.,Lemiti M.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference22 articles.

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2. J. Prima, F. Roy, P. Coudrain, X. Gagnard, J. Segura, Y. Cazaux, D. Herault, N. Virollet, N. Moussy, B. Giffard, and P. Gidon , inProceedings of the International Image Sensor Workshop, IEEE Electron Devices Society, pp. 5–8 (2007).

3. http://www.soitec.com/pdf/Smart_Stacking_wp, last accessed: May 2010.

4. N. Sato, K. Sakagushi, K. Yamagata, T. Atoji, Y. Fujiyama, J. Nakayama, and T. Yonehara , inIEEE International SOI Conference Proceedings, IEEE, pp. 176–177 (1995).

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