Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

Abstract

A numerical calculation model for a single wafer wet etching rate using a swinging nozzle was developed on the basis of computational fluid dynamics and the rate theory. This model was validated using the etching rate of a silicon dioxide film by hydrogen fluoride aqueous solution, which was injected from a center and a non-center nozzle onto a rotating 200-mm diameter silicon wafer surface. The injection nozzle at the non-center position was accounted as a cylindrically-shaped inlet. Calculation showed the maximum etching rate at the outside edge position of the swinging nozzle, consistent with the trend of measurement.