Growth and Characterization of SiC/SiN[sub x]/Si Structures-Reference-Cited by-同舟云学术

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Growth and Characterization of SiC/SiN[sub x]/Si Structures

Published:2001 Issue:3 Volume:148 Page:G132
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Nahm Kee Suk,Kim Kwang Chul,Lim Kee Young

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. B. L. Weiss,Properties of Silicon Carbide, INSPEC, London (1995).

2. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

3. Epitaxial growth and electric characteristics of cubic SiC on silicon

4. Epitaxial Growth and Characterization of β ‐ SiC Thin Films

5. SiC Silicon‐on‐Insulator Structures by Direct Carbonization Conversion and Postgrowth from Silacyclobutane

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the Si₃N₄ Coating on the Mc-Si Ingot in the Process of Multicrystalline Silicon Purification by Metallurgical Methods;Materials Science Forum;2011-02

2. A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cells;Solar Energy Materials and Solar Cells;2008-10

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