Etching of SiC Using Inductively Coupled Plasma-Reference-Cited by-同舟云学术

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Etching of SiC Using Inductively Coupled Plasma

Published:1998-10-01 Issue:10 Volume:145 Page:3609-3612
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Cao Lihui¹,Li Binghui¹,Zhao Jian H.¹

Affiliation:

1. Department of Electrical and Computer Engineering and The Microelectronics Research Laboratory, Rutgers‐The State University, Piscataway, New Jersey 08855

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838850/pdf

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