Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells-Reference-Cited by-同舟云学术

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Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

Published:2014-09-24 Issue:11 Volume:3 Page:Q79-Q81
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Goux L.,Fantini A.,Chen Y. Y.,Redolfi A.,Degraeve R.,Jurczak M.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Operando Spectroscopic Investigation of the Valence Change Mechanism in La₂NiO_4+δ ‐Based Memristive Devices;Advanced Electronic Materials;2024-07-04

3. Unraveling the origins of the coexisting localized-interfacial mechanism in oxide-based memristors in CMOS-integrated synaptic device implementations;Nanoscale Horizons;2024

4. Eightwise Switching Mechanism in Memristive SrTiO₃ Devices and Its Implications on the Device Performance;physica status solidi (a);2023-11-27

5. The Impact of Thermal Enhance Layers on the Relaxation Effect in Analog RRAM;IEEE Transactions on Electron Devices;2022-08

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