Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers-Reference-Cited by-同舟云学术

Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti–Si–N Heating Layers

Published:2008 Issue:6 Volume:155 Page:H421
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Yoon Sung-Min,Choi Kyu-Jeong,Lee Nam-Yeal,Jung Soon-Won,Lee Seung-Yun,Park Young-Sam,Yu Byoung-Gon,Lee Su-Jin,Yoon Soon-Gil

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Highly Reliable Ring-Type Contact for High-Density Phase Change Memory

2. A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

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