Optimization of H+ Implantation Parameters for Exfoliation of 4H-SiC Films

Abstract

In this study we show that for 1 µm thick 4H-SiC exfoliated films, there is an optimum implantation dose of about 6E16 cm-2 at 180 keV. The layer transfer is more difficult for higher as well as lower doses. Material doping and small changes in crystalline orientation do not have much impact on the exfoliation. Optical transmittance, Raman, RBS with ion channeling, SIMS, and optical microscopy are used for sample characterization.