CH 4 / H 2 / AR Electron Cyclotron Resonance Plasma Etching for GaAs ‐ Based Field Effect Transistors-Reference-Cited by-同舟云学术

CH 4 / H 2 / AR Electron Cyclotron Resonance Plasma Etching for GaAs ‐ Based Field Effect Transistors

Published:1995-08-01 Issue:8 Volume:142 Page:2849-2852
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

van Hassel J. G.¹,van Es C. M.²,Nouwens P. A. M.²,Maahury J. H.¹,Kaufmann L. M. F.¹

Affiliation:

1. Department of Electrical Engineering, COBRA Interuniversity Research Institute on Communication Technology, Eindhoven University of Technology, NL‐5600 ME Eindhoven, The Netherlands

2. Department of Technical Physics, COBRA Interuniversity Research Institute on Communication Technology, Eindhoven University of Technology, NL‐5600 ME Eindhoven, The Netherlands

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2050104/pdf

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of Dry Etch Damage to GaAs Using Pulse-Time Modulated Plasmas;Electrochemical and Solid-State Letters;2007

2. Comprehensive Characterization of In[sub 0.45]Al[sub 0.55]As∕In[sub 0.5]Ga[sub 0.5]As∕In[sub x]Al[sub 1−x]As Metamorphic High-Electron-Mobility Transistors on GaAs Substrates;Journal of The Electrochemical Society;2006

3. High density plasma oxide etching using nitrogen trifluoride and acetylene;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-11