High density plasma oxide etching using nitrogen trifluoride and acetylene-Reference-Cited by-同舟云学术

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High density plasma oxide etching using nitrogen trifluoride and acetylene

Published:2000-11 Issue:6 Volume:18 Page:2749-2758
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Pruette Laura,Karecki Simon,Chatterjee Ritwik,Reif Rafael,Sparks Terry,Vartanian Victor

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1290373

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cross Sections for Electron Collisions with NF3;Journal of Physical and Chemical Reference Data;2017-12

2. Calculated cross sections for electron collisions with NF3, NF2and NF with applications to remote plasma sources;Plasma Sources Science and Technology;2017-05-09

3. Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride;Journal of Crystal Growth;2007-02

4. Interlevel Dielectrics;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

5. SiO2and Si3N4etch mechanisms in NF3/hydrocarbon plasma;Journal of Physics D: Applied Physics;2006-02-03

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