Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces-Reference-Cited by-同舟云学术

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Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces

Published:2019-12-18 Issue:5 Volume:16 Page:507-519
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Brammertz Guy,Lin H.C.,Martens Koen,Mercier David,Merckling Clement,Penaud Julien,Adelmann Christoph,Sioncke Sonja,Wang Wei-E,Caymax Matty,Meuris Marc,Heyns Marc M.

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.2981632/pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Imaging the Quantum Capacitance of Strained MoS₂ Monolayers by Electrostatic Force Microscopy;ACS Nano;2024-01-18

2. Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors;Journal of Materials Science: Materials in Electronics;2020-06-22

3. Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor;Journal of Materials Science: Materials in Electronics;2018-08-13

4. Re-examination of the extraction of MOS interface-state density by C–V stretchout and conductance methods;Semiconductor Science and Technology;2013-06-12

5. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications;Current Opinion in Solid State and Materials Science;2011-10

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