Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon

Abstract

In this work, deep levels introduced by RTA and by subsequent anneals in n-type silicon were studied by deep level transient spectroscopy and by photoluminescence. After annealing at 650 {degree sign}C, centers related to rod-like defects appeared. Furthermore, signals related to thermal donors were found in a wide temperature range. New thermal donors were found even after annealing at temperatures above 900 {degree sign}C. The appearance of rod-like defects indicates that during cooling after RTA soak interstitials supersaturate. The appearance of rod-like defects is accompanied by a decrease of the thermal donor concentration