The Plasma Etching of Polysilicon with CF 3Cl / Argon Discharges: I . Parametric Modeling and Impedance Analysis-Reference-Cited by-同舟云学术

The Plasma Etching of Polysilicon with CF 3Cl / Argon Discharges: I . Parametric Modeling and Impedance Analysis

Published:1986-11-01 Issue:11 Volume:133 Page:2315-2325
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Allen Kenneth D.¹²³,Sawin Herbert H.¹²³,Mocella Michael T.¹²³,Jenkins Mary W.¹²³

Affiliation:

1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

2. E.I. du Pont de Nemours and Company, Incorporated, Freon® Products Laboratory, Wilmington, Delaware 19898

3. E.I. du Pont de Nemours and Company, Incorporated, Engineering Department, Wilmington, Delaware 19898

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2108400/pdf

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