Prospective and Critical Issues of III-V/Ge CMOS on Si Platform

Abstract

III-V/Ge CMOS on Si platform, realized by heterogeneous integration, is expected to provide a variety of applications from high speed logic CMOS to versatile SoC chips, where various functional devices can be co-integrated. Among them, high speed/low power logic CMOS using III-V/Ge channels are promising device solution for further progress in scaled CMOS. While many critical issues have been well recognized for them, we present possible solutions to break through these difficulties in this paper.