A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt-Reference-Cited by-同舟云学术

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A Study on the Scalability of a Selector Device Using Threshold Switching in Pt/GeSe/Pt

Published:2013-07-09 Issue:9 Volume:2 Page:N31-N33
ISSN:2162-8742
Container-title:ECS Solid State Letters
language:en
Short-container-title:ECS Solid State Letters

Author:

Ahn H.-W.,Jeong D. S.,Cheong B.-k.,Kim S.-d.,Shin S.-Y.,Lim H.,Kim D.,Lee S.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GeSe ovonic threshold switch: the impact of functional layer thickness and device size;Scientific Reports;2024-03-20

2. Origins of midgap states in Te-based Ovonic threshold switch materials;Acta Materialia;2023-10

3. Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy;Journal of Materials Science: Materials in Electronics;2023-10

4. The role of arsenic in the operation of sulfur-based electrical threshold switches;Nature Communications;2023-09-29

5. The Role of Arsenic in the Operation of Electrical Threshold Switches;2023-03-20

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