Author:
Patsch B.,Ehlert A.,Lankmayr E.
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Surface Imperfection Behavior during the SiH[sub 4] Epitaxial Growth Process
2. Low-Cost p[sup −]/p[sup −] Epitaxial Silicon Wafers for Densely Packed Metal-Oxide-Semiconductor Devices
3. M. A. Herman, W. Richter, and H. Sitter , inEpitaxy Physical Principles and Technical Implementation, R. Hull , R. M. Osgood, Jr ., J. Parisi , and H. Warlimont , Editors, Springer-Verlag, Berlin (2004).
4. I. Eisele, J. Schulze, and E. Kasper , inSilicon, Evolution and Future of a Technology, P. Siffert and E. Krimmel , Editors, p. 95, Springer-Verlag, Berlin (2004).
5. J. Bloem and L. J. Giling , inSilicon Materials, VLSI Electronics: Microstructure Science, N. G. Einspruch and H. Huff , Editors, Vol. 12, p. 89, Academic Press, New York (1985).
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