Study of Ge Threading Dislocations Post Growth Treatments
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Published:2013-03-15
Issue:9
Volume:50
Page:267-274
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Silber Amir,Ginsburg Eyal
Abstract
Threading dislocation density (TDD) of epitaxial Ge layer on Si was explored by defect etching. Ge samples were etched by chromium free Dash etching solution, and the influence of post process annealing was studied. The first part of this work deals with the comparison of two characterization methods for TDD: AFM of etch pits and TEM. The etch rate and morphology of Dash solution on pure Ge is introduced. The morphology and density of the etched pits is introduced for various annealing conditions after the growth.
Publisher
The Electrochemical Society
Cited by
1 articles.
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