Author:
Das Hrishikesh,Sunkari Swapna,Domeij Martin,Konstantinov Andrei,Allerstam Fredrik,Neyer Thomas
Abstract
Reliability and cost are the major factors facing large scale adoption of SiC power devices. The push to reduce costs with 150mm diameter wafers comes with lower crystal quality and higher defects, thus prompting reliability concerns. In this work we present ways for comprehensive detection and screening of bipolar degradation causing defects and other crystal defects to alleviate reliability concerns.
Publisher
The Electrochemical Society
Cited by
7 articles.
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