Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica-Reference-Cited by-同舟云学术

Development of Process Recipes for Maximum Mask Etch Selectivity and Maximum Etch Rate Having Vertical Sidewalls for Deep, Highly-Anisotropic Inductively-Coupled Plasma (ICP) Etching of Fused Silica

Published:2017 Issue:9 Volume:6 Page:P644-P652
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Pedersen Michael,Huff Michael

Funder

DOD | Defense Advanced Research Projects Agency (DARPA)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference16 articles.

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