Synthesis of SiC by High Temperature C + Implantation into SiO2 : The Role of Interface-Reference-Cited by-同舟云学术

Synthesis of SiC by High Temperature C + Implantation into SiO2 : The Role of Interface

Published:1997-12-01 Issue:12 Volume:144 Page:4314-4320
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Frey L.¹,Stoemenos J.²,Schork R.¹,Nejim A.³,Hemment P. L. F.³

Affiliation:

1. Fraunhofer-Institut fur Integrierte Schaltung, Bauelemente-Technologie, D-91058 Erlangen Germany

2. Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece

3. Department of Electronics and Electrical Engineering, University of Surrey, Guildford, Surrey GU25XH, England

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1838184/pdf

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